• DocumentCode
    236464
  • Title

    Quantum Hall devices based on single-crystalline graphene

  • Author

    Wang Xueshen ; Li Jinjin ; Zhong Qing ; Zhong Yuan ; Liu Yonggang

  • Author_Institution
    Nat. Inst. of Metrol., Beijing, China
  • fYear
    2014
  • fDate
    24-29 Aug. 2014
  • Firstpage
    538
  • Lastpage
    539
  • Abstract
    Large scale single-crystalline graphene was achieved on copper foils with CH4 as the precursor with a sandwich method. With a PMMA-assisted method, single-crystalline graphene was transferred to the marked SiO2/Si substrate. Quantum Hall devices will be fabricated by E-beam lithography and metallization. And, quantum Hall effect will be measured.
  • Keywords
    copper; electron beam lithography; foils; graphene; metallisation; quantum Hall effect; C; Cu; E-beam lithography; PMMA-assisted method; Si; SiO2-Si; SiO2/Si substrate; copper foils; metallization; quantum Hall devices; sandwich method; single-crystalline graphene; Graphene; Hall effect; Resistance; Silicon; Standards; Substrates; Surface treatment; Graphene; Quantum Hall devices; single-crystalline;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on
  • Conference_Location
    Rio de Janeiro
  • ISSN
    0589-1485
  • Print_ISBN
    978-1-4799-5205-2
  • Type

    conf

  • DOI
    10.1109/CPEM.2014.6898497
  • Filename
    6898497
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=236464