Title :
New design of decimal nominal value resistance based on Quantum Hall Array
Author :
Zhong Qing ; Wang Xueshen ; Li Jinjin ; Zhou Zhiqiang ; Shi Yong
Author_Institution :
Nat. Inst. of Metrol., Beijing, China
Abstract :
We reported the new design of quantum Hall array resistances. Two resistances, 100Ω and 1kΩ, were achieved by series and parallel connections of single quantum Hall device based on the AlGaAs/GaAs heterostructure. The relative deviations from the nominal value were -3.42 parts of 108 for both design.
Keywords :
Hall effect devices; III-V semiconductors; aluminium compounds; electric resistance measurement; gallium arsenide; quantum Hall effect; AlGaAs-GaAs; decimal nominal value resistance; parallel connections; quantum Hall array resistances; quantum Hall effect; resistance 1 kohm; resistance 100 ohm; series connections; single quantum Hall device; Arrays; Bars; Calibration; Circuit synthesis; Metrology; Resistance; Standards; Quantum Hall effect (QHE); quantum Hall array resistance devices (QHAR); quantum Hall array resistance standards (QHARS);
Conference_Titel :
Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on
Conference_Location :
Rio de Janeiro
Print_ISBN :
978-1-4799-5205-2
DOI :
10.1109/CPEM.2014.6898499
