Title :
A 3×3mm2 LTE/WCDMA dual-mode power amplifier module with integrated high directivity coupler
Author :
Hau, G. ; Hussain, A. ; Turpel, J. ; Donnenwirth, J.
Author_Institution :
ANADIGICS, Inc., Tyngsboro, MA, USA
Abstract :
This paper presents a 1920-1980MHz LTE/WCDMA GaAs HBT/pHEMT-based 3×3mm2 power amplifier module (PAM) with integrated directional coupler targeted for mobile handset applications. The PA operates in two power modes with a dual-path structure. Each path is optimized individually for each power mode, achieving low DC quiescent current and significant current saving compared to single-mode PAs under power backoff. Bias current and load impedance are specifically optimized for linear operation under high peak-to-average ratio LTE modulation. The PAM achieves a low quiescent current of 8mA. Under LTE modulation, the PAM exhibits 38/24% PAE at 27.5/16dBm Pout at UTRA ACLR1<;-39dBc. Under WCDMA modulation, the PAM attains 42/26% PAE at 28.5/17dBm Pout at ACLR1<;-40dBc. Further current saving is demonstrated with the use of variable power supply. The integrated 20dB coupler achieves ±0.06dB coupling variation under VSWR 2.5:1 mismatch, corresponding to a directivity of 36dB.
Keywords :
III-V semiconductors; Long Term Evolution; UHF bipolar transistors; UHF field effect transistors; UHF power amplifiers; code division multiple access; directional couplers; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; mobile handsets; pulse amplitude modulation; GaAs; HBT; LTE-WCDMA dual-mode power amplifier module; PAM; bias current; current 8 mA; dual-path structure; efficiency 24 percent; efficiency 26 percent; efficiency 38 percent; efficiency 42 percent; frequency 1920 MHz to 1980 MHz; high peak-to-average ratio LTE modulation; integrated high directivity coupler; load impedance; low DC quiescent current; mobile handset; pHEMT; power backoff; single-mode PA; variable power supply; Couplers; Modulation; Multiaccess communication; Peak to average power ratio; Power amplifiers; Spread spectrum communication; Switches;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082766
