DocumentCode :
2364732
Title :
A highly-efficient BiCMOS cascode Class-E power amplifier using both envelope-tracking and transistor resizing for LTE-like applications
Author :
Li, Yan ; Wu, Ruili ; Lopez, Jerry ; Lie, Donald Y C
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Tech Univ., Lubbock, TX, USA
fYear :
2011
fDate :
9-11 Oct. 2011
Firstpage :
142
Lastpage :
145
Abstract :
This paper presents the design of a SiGe differential cascode power amplifier (PA) to perform the envelope-tracking (ET) along with transistor resizing for efficiency enhancement for the 16QAM LTE. A new parallel-circuit class-E PA model is developed to analyze and design the cascode PA. The analytic results are compared with SPICE simulation and measurement data to provide circuit design insights. Measurement shows the ET-based PA system reaches an overall power-added-efficiency (PAE) of 38% at its 1 dB compression point (P1dB) of 22 dBm for its high power mode. Additionally, at the low power mode, some of the transistor cells can be disabled by the integrated MOSFET switches, and the overall PAE is improved by 4-5% at ≥4 dB back-off from its P1dB. This ET-based cascode PA satisfies the LTE 16QAM linearity specs without needing predistortions.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; Long Term Evolution; field effect transistor switches; power amplifiers; quadrature amplitude modulation; 16QAM LTE; ET-based PA system; LTE-like applications; Long-Term-Evolution; PAE; SPICE measurement data; SPICE simulation; SiGe; circuit design; differential cascode power amplifier; efficiency 38 percent; envelope-tracking; highly-efficient BiCMOS cascode Class-E power amplifier; integrated MOSFET switches; parallel-circuit class-E PA model; power-added-efficiency; transistor cells; transistor resizing; BiCMOS integrated circuits; CMOS integrated circuits; Linearity; Modulation; Power amplifiers; Silicon germanium; Transistors; LTE; SiGe BiCMOS power amplifier (PA); envelope-tracking (ET); parallel-circuit class-E PA model; transistor resizing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
ISSN :
1088-9299
Print_ISBN :
978-1-61284-165-6
Type :
conf
DOI :
10.1109/BCTM.2011.6082767
Filename :
6082767
Link To Document :
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