An ultra wide-band low-noise amplifier: Design and simulation using ED02AH and RFCMOS 0.18 µm technologies

Author

Hassani, H. ; Alahyari, A. ; Habibzadeh, A. ; Dousti, M.

Author_Institution

Malayer Branch, Sama Tech. & Vocational Training Coll., Islamic Azad Univ., Malayer, Iran

fYear

2011

fDate

25-27 April 2011

Firstpage

309

Lastpage

313

Abstract

The design and simulation of a wide-band RF amplifier has been presented. In this study, the design of one-stage and two-stage amplifier is investigated respectively under two types of technologies: ED02AH and RFCMOS 0.18 μm. We proposed the design of an amplifier in which its noise figure is better than 5 dB and its gain is more than 10 dB. In addition, input and output impedance matching and frequency stability from 2.5 to 30.5 GHz are considered simultaneously. The presented paper intended to achieve suitable gain, noise figure, and power consumption in the band of 2.5 GHz to 30.5 GHz utilizing the least elements.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; integrated circuit design; integrated circuit noise; low noise amplifiers; ultra wideband technology; ED02AH; RFCMOS technologies; frequency 2.5 GHz to 30.5 GHz; noise figure; one-stage amplifier; size 0.18 mum; two-stage amplifier; ultrawide-band low-noise amplifier; Gain; Impedance matching; Low-noise amplifiers; Noise figure; Radio frequency; Transistors; Wideband; impedance matching; one-stage low noise amplifier; wide-band low-noise two-stage amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Devices, Systems and Applications (ICEDSA), 2011 International Conference on

Conference_Location

Kuala Lumpur

ISSN

2159-2047

Print_ISBN

978-1-61284-388-9

Type

conf

DOI

10.1109/ICEDSA.2011.5959036

Filename

5959036