Title :
A Q-band SiGe power amplifier with 17.5 dBm saturated output power and 26% peak PAE
Author :
Tai, Wei ; Carley, L. Richard ; Ricketts, David S.
Author_Institution :
Carnegie Mellon Univ., Pittsburgh, PA, USA
Abstract :
A Q-band class-B power amplifier implemented in a 0.13 μm SiGe BiCMOS process is presented. At 45 GHz, the PA achieves a 17.5 dBm saturated output power, a 16.6 dB peak power gain, and a 26% peak power-added efficiency (PAE) with a 2.5V supply. A 2-stage, single-ended, inductor matched topology is used. To support envelope modulation transceiver topologies, the output common-emitter stage is optimized for high efficiency under varying supply voltage and maintains a peak PAE of greater than 21% throughout the supply voltage range of 1.3V to 2.5V. The PA occupies a total die area of 0.2 mm2.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; field effect MIMIC; millimetre wave power amplifiers; BiCMOS process; PAE; Q-band class-B power amplifier; SiGe; efficiency 26 percent; envelope modulation transceiver topology; frequency 45 GHz; gain 16.6 dB; inductor matched topology; size 0.13 mum; voltage 2.5 V; BiCMOS integrated circuits; Gain; Inductors; Power amplifiers; Power generation; Silicon germanium; Topology; Power amplifier (PA); Q-band; class-B; millimeter-wave (mmW) power amplifier; silicon germanium (SiGe) HBT;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082768
