DocumentCode
2364759
Title
Bipolar 6.5 kV-SiC-diodes: on the road to industrial application
Author
Bartsch, Wolfgang ; Elpelt, Rudolf ; Schoerner, Reinhold ; Dohnke, Karl-Otto ; Bloecher, Bernd ; Koerber, Klaus
Author_Institution
SiCED Electron. Dev. GmbH & Co. KG, Erlangen
fYear
2005
fDate
11-14 Sept. 2005
Abstract
This work presents the transient behaviour of paralleled 6.5 kV bipolar SiC diodes with aluminium implanted emitters. The switching behaviour at a current level of 30 A is shown at DC link voltages up to 4 kV and at a junction temperature of 125degC. Different IGBT gate resistor conditions realise different rates of current decay up to 1000 A/mus. Experimental results are discussed in terms of snappiness
Keywords
insulated gate bipolar transistors; semiconductor diodes; wide band gap semiconductors; 125 degC; 30 A; 6.5 kV; DC link voltages; IGBT gate resistor; aluminium implanted emitters; bipolar SiC diodes; junction temperature; switching behaviour; Annealing; Doping; Electronic circuits; Fabrication; Resistors; Semiconductor device measurement; Semiconductor diodes; Silicon carbide; Temperature; Voltage; Bipolar device; High power discrete device; Measurement; Passive component; Power semiconductor device;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications, 2005 European Conference on
Conference_Location
Dresden
Print_ISBN
90-75815-09-3
Type
conf
DOI
10.1109/EPE.2005.219731
Filename
1665921
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