Title :
Trends in GaAs HBTs for wireless and RF
Author_Institution :
RF Micro Devices, Greensboro, NC, USA
Abstract :
Since the late 1990´s GaAs HBT has been the preferred technology for cellular power amplifiers. Performance advantages in power density, gain, linearity, efficiency and ruggedness combined with integration capabilities (passives and more recently BiFET) gave HBT the advantage over GaAs MESFET and pHEMT and silicon alternatives. This talk will review the factors that made the HBT the best solution for the cellular PA, evolution of HBT device and manufacturing technology over the last 15 years and current challenges and outlook for GaAs HBT and cellular PAs in general.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; power amplifiers; GaAs; HBT device; MESFET; cellular PA; cellular power amplifiers; pHEMT; power density; silicon alternatives; Gallium arsenide; Heterojunction bipolar transistors; Metals; PHEMTs; Performance evaluation; Wiring; bipolar integrated circuits; device physics; heterojunction bipolar transistors; integrated circuit manufacturing; rf integrated circuits; semiconductor device manufacture; semiconductor epitaxial layers;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082769
