Terahertz operation of GaAs/AlGaAs metal-semiconductor-metal photodetectors

Author

Ryzhii, M. ; Khmyrova, I. ; Ryzhii, V. ; Willander, M.

Author_Institution

Chalmers Univ. of Technol., Goteborg, Sweden

fYear

1998

fDate

3-4 Sep 1998

Firstpage

199

Lastpage

200

Abstract

The paper deals with a Monte Carlo particle study of MSM photodetectors operation in THz range of signal frequencies. The obtained numerical results are discussed invoking the developed analytical model of the MSM photodetectors. We consider planar interdigitated MSM photodetectors made of a thin GaAs absorbing layer on a AlGaAs substrate

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; infrared detectors; metal-semiconductor-metal structures; photodetectors; semiconductor device models; submillimetre wave detectors; AlGaAs; AlGaAs substrate; GaAs; GaAs/AlGaAs metal-semiconductor-metal photodetectors; MSM photodetectors; Monte Carlo particle study; THz range; planar interdigitated MSM photodetectors; signal frequencies; terahertz operation; thin GaAs absorbing layer; Charge carrier processes; Electrons; Frequency dependence; Gallium arsenide; Monte Carlo methods; Optical modulation; Optical pulses; Photodetectors; Photonic band gap; Schottky barriers;

fLanguage

English

Publisher

ieee

Conference_Titel

Terahertz Electronics Proceedings, 1998. THz Ninety Eight. 1998 IEEE Sixth International Conference on

Conference_Location

Leeds

Print_ISBN

0-7803-4903-2

Type

conf

DOI

10.1109/THZ.1998.731722

Filename

731722