Title :
Harmonic distortion in switched-current memory cell
Author :
Raahemi, Bijan ; Opal, Ajoy
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
The lower and upper bounds on the Total Harmonic Distortion (THD) of a switched-current (SI) memory cell are given. The upper bound is an improvement on previously published results. The simulation results show that the THD measure is always within the bounds given by the explicit formula
Keywords :
harmonic distortion; integrated memory circuits; switched current circuits; simulation; switched-current memory cell; total harmonic distortion; Capacitance; Circuits; Computational modeling; Distortion measurement; Genetic expression; Harmonic distortion; Power measurement; Power system harmonics; Total harmonic distortion; Upper bound;
Conference_Titel :
Electrical and Computer Engineering, 1997. Engineering Innovation: Voyage of Discovery. IEEE 1997 Canadian Conference on
Conference_Location :
St. Johns, Nfld.
Print_ISBN :
0-7803-3716-6
DOI :
10.1109/CCECE.1997.608277
