DocumentCode
2364797
Title
Harmonic distortion in switched-current memory cell
Author
Raahemi, Bijan ; Opal, Ajoy
Author_Institution
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Volume
2
fYear
1997
fDate
25-28 May 1997
Firstpage
532
Abstract
The lower and upper bounds on the Total Harmonic Distortion (THD) of a switched-current (SI) memory cell are given. The upper bound is an improvement on previously published results. The simulation results show that the THD measure is always within the bounds given by the explicit formula
Keywords
harmonic distortion; integrated memory circuits; switched current circuits; simulation; switched-current memory cell; total harmonic distortion; Capacitance; Circuits; Computational modeling; Distortion measurement; Genetic expression; Harmonic distortion; Power measurement; Power system harmonics; Total harmonic distortion; Upper bound;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering, 1997. Engineering Innovation: Voyage of Discovery. IEEE 1997 Canadian Conference on
Conference_Location
St. Johns, Nfld.
ISSN
0840-7789
Print_ISBN
0-7803-3716-6
Type
conf
DOI
10.1109/CCECE.1997.608277
Filename
608277
Link To Document