Integration of isolated RF-LDMOS transistors in a 0.25 µm SiGe:C BICMOS process

Author

Sorge, R. ; Fischer, A. ; Schmidt, J. ; Wipf, C. ; Barth, R. ; Pliquett, R.

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2011

fDate

9-11 Oct. 2011

Firstpage

162

Lastpage

165

Abstract

Isolated LDMOS transistors with thin gate oxides and good RF performance are key components in integrated RF circuits where large voltage shifts are required for the circuit functionality. We demonstrate the modular integration of isolated NLDMOS and PLDMOS focusing on maximal RF performance into an advanced industrial 0.25 μm SiGe:C BICMOS process. A boundary condition for device construction was a limit for maximum deep n-well implantation energy of 750keV. The achieved values BV_DSS/f_T/f_MAX of -21V/10GHz/35GHz for the PLDMOS and 16V/30GHz/53GHz for the isolated NLDMOS, respectively, reflect the excellent RF performance obtained.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MOSFET; carbon; BICMOS process; SiGe:C; boundary condition; device construction; electron volt energy 750 keV; frequency 10 GHz; frequency 30 GHz; frequency 35 GHz; frequency 53 GHz; integrated RF circuits; isolated RF-LDMOS transistors; maximum deep n-well implantation; size 0.25 mum; thin gate oxides; voltage -21 V; voltage 16 V; BiCMOS integrated circuits; CMOS integrated circuits; Implants; Logic gates; Performance evaluation; Radio frequency; Transistors; RF circuits; Silicon bipolar/BiCMOS process technology; analog or digital circuits; bipolar modeling and simulation; device physics; power devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE

Conference_Location

Atlanta, GA

ISSN

1088-9299

Print_ISBN

978-1-61284-165-6

Type

conf

DOI

10.1109/BCTM.2011.6082772

Filename

6082772