An integrated aluminum/CVD-W metallization process for sub-micron contact filling

Author

Ellwanger, R.C. ; Broadbent, E.K. ; Prall, K.D. ; Setalvad, T.

Author_Institution

Signetics Co., Albuquerque, NM, USA

fYear

1991

fDate

11-12 Jun 1991

Firstpage

41

Lastpage

50

Abstract

The development of a contact metallization scheme which allows the planarized deposition of aluminum by sputtering methods is reported. Deposition of a thin (⩽0.2 μm) CVD-W film onto a TiN adhesion layer provides good contact and junction properties, barrier integrity, and avoids a re-entrant profile for hot Al filling. The CVD-W/Al layerings withstood not only the temperature of hot (450°C) Al deposition, but additional anneal periods at 500°C without significant junction deterioration. In contrast, conventional PVD barriers alone (TiW, TiW-N, TiN) failed prematurely as a result of the high temperature Al deposition

Keywords

CVD coatings; aluminium; integrated circuit technology; metallisation; sputter deposition; tungsten; 450 degC; 500 degC; Al deposition; Al-W-TiN layers; CVD-W/Al layerings; IC interconnection; TiN adhesion layer; anneal periods; barrier integrity; contact metallization scheme; hot Al filling; sub-micron contact filling; Aluminum; Annealing; Atherosclerosis; Contact resistance; Etching; Filling; Metallization; Plasma temperature; Sputtering; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE

Conference_Location

Santa Clara, CA

Print_ISBN

0-87942-673-X

Type

conf

DOI

10.1109/VMIC.1991.152964

Filename

152964