Title :
An integrated aluminum/CVD-W metallization process for sub-micron contact filling
Author :
Ellwanger, R.C. ; Broadbent, E.K. ; Prall, K.D. ; Setalvad, T.
Author_Institution :
Signetics Co., Albuquerque, NM, USA
Abstract :
The development of a contact metallization scheme which allows the planarized deposition of aluminum by sputtering methods is reported. Deposition of a thin (⩽0.2 μm) CVD-W film onto a TiN adhesion layer provides good contact and junction properties, barrier integrity, and avoids a re-entrant profile for hot Al filling. The CVD-W/Al layerings withstood not only the temperature of hot (450°C) Al deposition, but additional anneal periods at 500°C without significant junction deterioration. In contrast, conventional PVD barriers alone (TiW, TiW-N, TiN) failed prematurely as a result of the high temperature Al deposition
Keywords :
CVD coatings; aluminium; integrated circuit technology; metallisation; sputter deposition; tungsten; 450 degC; 500 degC; Al deposition; Al-W-TiN layers; CVD-W/Al layerings; IC interconnection; TiN adhesion layer; anneal periods; barrier integrity; contact metallization scheme; hot Al filling; sub-micron contact filling; Aluminum; Annealing; Atherosclerosis; Contact resistance; Etching; Filling; Metallization; Plasma temperature; Sputtering; Tin;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.152964
