DocumentCode
2364925
Title
Characterization and modeling of SiGe HBT low-frequency noise in inverse operating condition
Author
Tang, Jin ; Babcock, Jeff A. ; Krakowski, Tracey L. ; Smith, Linda ; Cestra, Greg
Author_Institution
Nat. Semicond., Santa Clara, CA, USA
fYear
2011
fDate
9-11 Oct. 2011
Firstpage
174
Lastpage
177
Abstract
We present in this work the first characterization and modeling of low-frequency noise for SiGe-NPNs and SiGe-PNPs operating in the inverse mode from an advanced SiGe RF technology on SOI. Comparison is made between low-frequency noise in the forward and inverse modes. Impact of selective implanted collector (SIC) on inverse mode low-frequency noise is investigated. Finally, a methodology for low-frequency noise compact modeling in the inverse mode of operation is discussed.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; silicon-on-insulator; HBT low-frequency noise; NPN; PNP; RF technology; SOI; SiGe; inverse mode low-frequency noise; selective implanted collector; Current measurement; Integrated circuit modeling; Junctions; Low-frequency noise; Noise measurement; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location
Atlanta, GA
ISSN
1088-9299
Print_ISBN
978-1-61284-165-6
Type
conf
DOI
10.1109/BCTM.2011.6082775
Filename
6082775
Link To Document