Compact noise modeling of SiGe Heterojunction Bipolar Transistors: Relevance of base-collector shot noise correlation and non quasi-static effects in the quasi-neutral emitter

This paper addresses the challenge of compact model based noise prediction for present and upcoming generations industrial SiGe Heterojunction Bipolar Transistors (HBT´s). Firstly, we verify the paradigm of compact model based prediction of noise characteristics, from exclusively dc-and ac data. As part of this, secondly, we verify relevant modeling capabilities of the standard compact model Mextram. Thirdly, by careful interpretation of remaining small but systematic deviations between measured noise characteristics and model predictions, we identify upcoming challenges in noisemodeling with respect to future applications of SiGe HBT technology. We discuss the relevance of the emitter diffusion charge and of the non quasi-static (NQS) effects in the quasi-neutral (QN) emitter to noise modeling.