Title :
Modeling high-frequency noise in SiGe HBTs using delayed minority charge
Author :
Kumar, K. ; Chakravorty, A.
Author_Institution :
Dept. of Electr. Eng., IIT Madras, Chennai, India
Abstract :
Based on delayed minority charge high frequency correlated noise in silicon germanium heterojunction bipolar transistor is modeled. Following system theory, the formulated model equations are accurately implemented in Verilog-A using four extra nodes. Results show excellent agreement with numerically simulated data. Simplified model versions are also implemented and tested. Relation between high-frequency correlated noise and non-quasi-static effect is identified through delayed minority charge.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; SiGe; Verilog-A; delayed minority charge; heterojunction bipolar transistors; high frequency correlated noise; non-quasi-static effect; Hardware design languages; Heterojunction bipolar transistors; Integrated circuit modeling; Mathematical model; Noise; Numerical models; Silicon germanium; NQS effect; PCB model; SiGe HBT; Verilog-A implementation; correlated noise; minority charge;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082777
