Experimental extraction of the base resistance of SiGe:C HBTs beyond BVCEO: An improved technique

Author

Costagliola, M. ; d´Alessandro, V. ; Céli, D. ; Chantre, A. ; Chevalier, P. ; Meister, T. ; Aufinger, K. ; Rinaldi, N.

Author_Institution

Dept. of Biomed., Electron., & Telecommun. Eng., Univ. of Naples Federico II, Naples, Italy

fYear

2011

fDate

9-11 Oct. 2011

Firstpage

187

Lastpage

190

Abstract

In this work, we present an extended version of a dc method to experimentally evaluate the base resistance R_B of bipolar transistors as a function of the biasing conditions. In particular, the approach allows accurately monitoring the R_B increase with collector voltage beyond the open-base breakdown voltage BV_CEO up to the pinch-in occurrence. The method is successfully applied to state-of-the-art HF SiGe:C heterojunction bipolar transistors (HBTs).

Keywords

Ge-Si alloys; carbon; electric breakdown; heterojunction bipolar transistors; semiconductor materials; DC method; SiGe:C; base resistance extraction; collector voltage; heterojunction bipolar transistors; open-base breakdown voltage; Bipolar transistors; Current measurement; Immune system; Integrated circuits; Resistance; Transistors; Base resistance; bipolar transistor; dc measurements; parameter extraction; pinch-in;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE

Conference_Location

Atlanta, GA

ISSN

1088-9299

Print_ISBN

978-1-61284-165-6

Type

conf

DOI

10.1109/BCTM.2011.6082778

Filename

6082778