Title :
Experimental extraction of the base resistance of SiGe:C HBTs beyond BVCEO: An improved technique
Author :
Costagliola, M. ; d´Alessandro, V. ; Céli, D. ; Chantre, A. ; Chevalier, P. ; Meister, T. ; Aufinger, K. ; Rinaldi, N.
Author_Institution :
Dept. of Biomed., Electron., & Telecommun. Eng., Univ. of Naples Federico II, Naples, Italy
Abstract :
In this work, we present an extended version of a dc method to experimentally evaluate the base resistance RB of bipolar transistors as a function of the biasing conditions. In particular, the approach allows accurately monitoring the RB increase with collector voltage beyond the open-base breakdown voltage BVCEO up to the pinch-in occurrence. The method is successfully applied to state-of-the-art HF SiGe:C heterojunction bipolar transistors (HBTs).
Keywords :
Ge-Si alloys; carbon; electric breakdown; heterojunction bipolar transistors; semiconductor materials; DC method; SiGe:C; base resistance extraction; collector voltage; heterojunction bipolar transistors; open-base breakdown voltage; Bipolar transistors; Current measurement; Immune system; Integrated circuits; Resistance; Transistors; Base resistance; bipolar transistor; dc measurements; parameter extraction; pinch-in;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082778
