Title :
HICUM/2 v2.3 parameter extraction for advanced SiGe-heterojunction bipolar transistors
Author :
Pawlak, A. ; Schröter, M. ; Krause, J. ; Céli, D. ; Derri, N.
Author_Institution :
Dresden Univ. of Technol., Dresden, Germany
Abstract :
This paper presents extraction methodologies for advanced SiGe heterojunction bipolar transistors (HBTs). Demonstrated methods focus on extracting the transfer current related parameters over a large temperature range for the new version 2.3 of the compact HBT model HICUM Level 2. Also shown are the limitations of existing extraction methods. Results for DC and AC characteristics are shown for different temperatures.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; AC characteristics; DC characteristics; HICUM-2 v2.3 parameter extraction method; SiGe; advanced SiGe-heterojunction bipolar transistors; compact HBT model HICUM level 2; Heterojunction bipolar transistors; Integrated circuits; Mathematical model; Parameter extraction; Silicon germanium; Temperature; Temperature dependence; Compact Model; Extraction; HICUM; SiGe-HBTs;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082780
