HICUM/2 v2.3 parameter extraction for advanced SiGe-heterojunction bipolar transistors

Author

Pawlak, A. ; Schröter, M. ; Krause, J. ; Céli, D. ; Derri, N.

Author_Institution

Dresden Univ. of Technol., Dresden, Germany

fYear

2011

fDate

9-11 Oct. 2011

Firstpage

195

Lastpage

198

Abstract

This paper presents extraction methodologies for advanced SiGe heterojunction bipolar transistors (HBTs). Demonstrated methods focus on extracting the transfer current related parameters over a large temperature range for the new version 2.3 of the compact HBT model HICUM Level 2. Also shown are the limitations of existing extraction methods. Results for DC and AC characteristics are shown for different temperatures.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; AC characteristics; DC characteristics; HICUM-2 v2.3 parameter extraction method; SiGe; advanced SiGe-heterojunction bipolar transistors; compact HBT model HICUM level 2; Heterojunction bipolar transistors; Integrated circuits; Mathematical model; Parameter extraction; Silicon germanium; Temperature; Temperature dependence; Compact Model; Extraction; HICUM; SiGe-HBTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE

Conference_Location

Atlanta, GA

ISSN

1088-9299

Print_ISBN

978-1-61284-165-6

Type

conf

DOI

10.1109/BCTM.2011.6082780

Filename

6082780

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2365008