Influence of probe tip calibration on measurement accuracy of small-signal parameters of advanced BiCMOS HBTs

Author

Rumiantsev, A. ; Sakalas, P. ; Derrier, N. ; Celi, D. ; Schroter, M.

Author_Institution

Cascade Microtech GmbH, Sacka, Germany

fYear

2011

fDate

9-11 Oct. 2011

Firstpage

203

Lastpage

206

Abstract

This paper presents investigation results of the probe-tip calibration impact on the BiCMOS HBT small-signal parameter measurement accuracy. Popular calibration procedures were applied on the same data set and followed by the two-step de-embedding from the device dedicated Compete-Open and Complete-Short dummy elements. Experimental results showed that the observed difference in cold HBT parameters and parameters of passive devices was minimized by the de-embedding step. The f_T and f_MAX demonstrated higher sensitivity to the probe-tip calibration residual errors.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; calibration; heterojunction bipolar transistors; probes; SiGe; advanced BiCMOS HBT; device dedicated compete-open dummy element; device dedicated complete-short dummy element; measurement accuracy; passive device parameter; probe-tip calibration residual error; small-signal parameter measurement accuracy; two-step deembedding; Accuracy; Calibration; Heterojunction bipolar transistors; Impedance; Microwave measurements; Probes; Transmission line measurements; S-Parameters; Silicon-germanium HBT; calibration; de-embedding; silicon bipolar/BiCMOS process technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE

Conference_Location

Atlanta, GA

ISSN

1088-9299

Print_ISBN

978-1-61284-165-6

Type

conf

DOI

10.1109/BCTM.2011.6082782

Filename

6082782