DocumentCode :
2365114
Title :
An integrated approach to MOS-gated power semiconductor manufacturing based on cleaner production technologies for waste minimization by design
Author :
Anderson, Samuel ; Balkau, Fritz ; Gürkök, Cahit
Author_Institution :
Semicond. Products Sector, Motorola Inc., Phoenix, AZ, USA
fYear :
1995
fDate :
1-3 May 1995
Firstpage :
245
Lastpage :
252
Abstract :
MOS-gated power semiconductors are enabling technologies for “efficient end-use” power conversion systems. The use of these technologies for energy savings offers an environmental benefit of reduction in carbon dioxide emissions if the primary energy source is fossil fuel based. The manufacturing of these technologies using clean production processes by design is discussed
Keywords :
environmental factors; insulated gate bipolar transistors; power semiconductor devices; semiconductor device manufacture; MOS-gated power semiconductors; carbon dioxide emissions reduction; clean production technologies; energy saving; environmental benefit; semiconductor manufacturing; waste minimization; Carbon dioxide; Electronics industry; Energy consumption; Fossil fuels; Humans; Manufacturing industries; Power generation; Production; Semiconductor device manufacture; Tellurium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and the Environment, 1995. ISEE., Proceedings of the 1995 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-2137-5
Type :
conf
DOI :
10.1109/ISEE.1995.514984
Filename :
514984
Link To Document :
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