DocumentCode :
2365115
Title :
Synthesis and characterization of NaYF4: Yb, Er nanoparticles with efficient up-conversion fluorescence based on new type solar cells
Author :
Zhang, X.D. ; Jin, X. ; Lei, Z.L. ; Cai, N. ; Xiong, S.Z. ; Zhao, Y.
Author_Institution :
Key Lab. of Photo-Electron. Thin Film Devices, Tech. of Nankai Univ., Tianjin
fYear :
2008
fDate :
24-27 March 2008
Firstpage :
5
Lastpage :
9
Abstract :
An up-converting material, which can be efficiently excited by near infrared light and emit strong visible light through a process termed dasiaup-conversion fluorescencepsila, has shown great potential for use in silicon thin films solar cells. This kind of material when placed on the rear side of p-i-n type silicon thin films solar cells will increase the overall efficiency of the PV device by utilizing sub-band gap photons that would otherwise be transmitted through the device. Sodium yttrium fluoride (NaYF4) up-converting nanoparticles doped with lanthanide ions have been synthesized. Different lanthanide ions (Yb3+, Er3+) were doped into the nanoparticles, which showed strong up-conversion fluorescence under excitation at 980 nm. Above reason comes from that intensity of the hexagonal nanocrystals in this work is much higher than that of other cubic-phase NaYF4 nanocrystals. In addition, the nanoparticles showed a spherical shape with an average size of about 50 nm.
Keywords :
elemental semiconductors; energy gap; erbium; fluorescence; nanoparticles; nanotechnology; semiconductor thin films; silicon; sodium compounds; solar cells; ytterbium; NaYF4:Yb,Er; PV device; Si; hexagonal nanocrystals; infrared light; lanthanide ions; nanocrystals; nanoparticle synthesis; p-i-n type silicon thin films solar cells; sodium yttrium fluoride upconverting nanoparticles; subband gap photons; upconversion fluorescence; visible light; Erbium; Fluorescence; Nanocrystals; Nanoparticles; PIN photodiodes; Photovoltaic cells; Semiconductor thin films; Silicon; Thin film devices; Yttrium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
Type :
conf
DOI :
10.1109/INEC.2008.4585426
Filename :
4585426
Link To Document :
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