DocumentCode :
2365180
Title :
Recent progress in high-power blue-violet lasers
Author :
Uchida, Shiro ; Takeya, Motonobu ; Ikeda, Shinroh ; Mizuno, Takashi ; Fujimoto, Tsuyoshi ; Matsumoto, Osamu ; Goto, Shu ; Tojyo, Tsuyoshi ; Ikeda, Masao
Author_Institution :
Dev. Center, Sony Shiroishi Semicond. Inc., Miyagi, Japan
fYear :
2002
fDate :
2002
Firstpage :
5
Lastpage :
6
Abstract :
GaN-based 400-nm high-power lasers have been developed as a light source for optical disk recording, laser printer, and displays. The lasers in systems for optical disks with capacities greater than 50 GB are required to operate at high output power exceeding 100 mW in order to write information to a dual-layer disk. To satisfy this performance requirement, we examined the absorption loss in Mg-doped GaN super-lattice layers, and successfully reduced the internal loss by isolating these layers from the active layer.
Keywords :
III-V semiconductors; gallium compounds; optical disc storage; quantum well lasers; 100 mW; 400 nm; 50 GB; GaN; GaN-based 400-nm high-power lasers; GaN:Mg; Mg-doped GaN super-lattice layers; active layer; dual-layer disk; high-power blue-violet lasers; internal loss; optical disk recording; Absorption; Disk recording; Displays; Light sources; Optical losses; Optical recording; Performance loss; Power generation; Power lasers; Printers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
Type :
conf
DOI :
10.1109/ISLC.2002.1041091
Filename :
1041091
Link To Document :
بازگشت