DocumentCode
2365188
Title
High-performance vertical-cavity surface-emitting lasers with emission wavelengths from 650 nm to 670 nm
Author
Knigge, A. ; Zorn, M. ; Unold, H.J. ; Mederer, F. ; Weyers, M. ; Tränkle, G.
Author_Institution
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
fYear
2002
fDate
2002
Firstpage
7
Lastpage
8
Abstract
Record output power and temperature stability of MOVPE grown GaInP MQW oxide-confined VCSELs with 650 nm to 670 nm wavelength are presented including good high frequency behaviour.
Keywords
III-V semiconductors; gallium compounds; indium compounds; laser transitions; quantum well lasers; surface emitting lasers; thermal stability; vapour phase epitaxial growth; 650 to 670 nm; GaInP; GaInP MQW oxide-confined VCSELs; MOVPE grown; high frequency behaviour; high-performance vertical-cavity surface-emitting lasers; record output power; temperature stability; Epitaxial growth; Epitaxial layers; Frequency; Power generation; Quantum well devices; Stability; Surface emitting lasers; Surface waves; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN
0-7803-7598-X
Type
conf
DOI
10.1109/ISLC.2002.1041092
Filename
1041092
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