Title :
Design of SCR devices for SiGe BiCMOS applications
Author :
Parthasarathy, Srivatsan ; Salcedo, Javier A. ; Hajjar, Jean-Jacques
Author_Institution :
Analog Devices, Wilmington, MA, USA
Abstract :
An optimum vertical SiGe SCR design is presented for on-chip electrostatic discharge (ESD) protection. The device response to fast transients, emulating ESD CDM-type events, is compared with standard clamp structures having similar footprint-area, loading-capacitance and current handling ability. SCR designs include variation in the device´s anode construction, anode geometry and triggering mechanism.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; electrostatic discharge; thyristors; BiCMOS; ESD; SCR; SiGe; anode construction; anode geometry; on-chip electrostatic discharge protection; optimum vertical silicon controlled rectifiers design; triggering mechanism; Anodes; BiCMOS integrated circuits; Capacitance; Electrostatic discharges; Silicon germanium; Thyristors; Transient analysis; ESD; HBT; RF circuits; Reliability; SiGe bipolar/BiCMOS process technology;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082789
