Solidly mounted BAW filters for the 6 to 8 GHz range based on AlN thin films

Author

Lanz, Roman ; Dubois, Marc-Alexandre ; Muralt, Paul

Author_Institution

Dept. des Mater., Ecole Polytech. Fed. de Lausanne, Switzerland

Volume

1

fYear

2001

fDate

2001

Firstpage

843

Abstract

Bulk acoustic wave (BAW) resonators and filters have been fabricated in the frequency range between 7 and 8 GHz. Resonators with quality factors of 400 to 600, and coupling factors k² of 4 to 5.5% have been achieved. The obtained resonator characteristics theoretically yield filters of 3.5% 3 dB bandwidths with flat channel characteristics, and insertion losses of -6 dB. The trade-offs related to the use of aluminum or platinum bottom electrodes is investigated theoretically. While aluminum is expected to yield filters with lower insertion loss, Pt is expected to yield larger bandwidths

Keywords

III-V semiconductors; Q-factor; acoustic microwave devices; acoustic resonator filters; aluminium; aluminium compounds; bulk acoustic wave devices; electrodes; piezoelectric semiconductors; piezoelectric thin films; platinum; semiconductor thin films; 6 dB; 6 to 8 GHz; AlN thin films; AlN-Al; AlN-Pt; aluminum electrodes; bandwidths; bulk acoustic wave resonators; coupling factors; filters; flat channel characteristics; insertion loss; insertion losses; platinum bottom electrodes; quality factors; resonator characteristics; solidly mounted BAW filters; trade-offs; Acoustic waves; Aluminum; Band pass filters; Electrodes; Frequency; Piezoelectric films; Resonator filters; Sputtering; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2001 IEEE

Conference_Location

Atlanta, GA

Print_ISBN

0-7803-7177-1

Type

conf

DOI

10.1109/ULTSYM.2001.991851

Filename

991851