Title :
Narrow stripe distributed reflector lasers with first-order vertical grating
Author :
Kim, Hyo-Chang ; Kanjo, Hiroshi ; Tamura, Shigeo ; Arai, Shigehisa
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
Summary form only given. We realized 1.3 μm-wide mesa stripe GaInAsP/InP distributed reflector semiconductor lasers consisting of first-order vertical grating DFB and first-order deeply etched DBR, and obtained a threshold current of 3.6mA for the active region length of 21μm.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; distributed feedback lasers; gallium arsenide; indium compounds; laser transitions; semiconductor lasers; 1.3 micron; 21 micron; 3.6 mA; GaInAsP-InP; active region length; first-order deeply etched DBR; first-order vertical grating; first-order vertical grating DFB; mesa stripe GaInAsP/InP distributed reflector semiconductor lasers; narrow stripe distributed reflector lasers; threshold current; Distributed Bragg reflectors; Electrons; Etching; Gratings; Indium phosphide; Laser modes; Mirrors; Optical design; Optical device fabrication; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041098
