Title :
Proceedings of International Symposium on Power Semiconductor Devices and IC´s: ISPSD ´95
Abstract :
The following topics were dealt with: MOS thyristors; power IC s; high power devices; SiC devices; MOS devices; metalization and packaging; IGBTs
Keywords :
MOS-controlled thyristors; insulated gate bipolar transistors; power MOSFET; power integrated circuits; power semiconductor devices; IGBTs; MOS devices; MOS thyristors; SiC devices; high power devices; metalization; packaging; power IC s; power semiconductor devices;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama, Japan
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.514998
