Title :
Spectral linewidth re-broadening and photon density distribution in 1550nm high power CW-DFB lasers
Author :
Takaki, K. ; Kise, T. ; Maruyama, K. ; Yamanaka, N. ; Funabashi, M. ; Kasukawa, A.
Author_Institution :
Yokohama R & D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
First investigation on spectral linewidth re-broadening due to photon density distribution has yielded optimized high-power (225mW) CW-DFB MQW lasers with very narrow linewidth (0.7MHz at 100mW).
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; quantum well lasers; spectral line broadening; 100 mW; 1550 nm; 1550nm high power CW-DFB lasers; 225 mW; InGaAsP-InP; MQW lasers; optimized high-power; photon density distribution; spectral linewidth re-broadening; very narrow linewidth; Coatings; Diode lasers; Distributed feedback devices; Laboratories; Laser feedback; MOCVD; Optoelectronic and photonic sensors; Power generation; Power lasers; Thermal conductivity;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041100
