Title :
Design, fabrication and characterization of high-power angled-grating distributed-feedback lasers
Author :
Paschke, K. ; Güther, R. ; Fricke, J. ; Sebastian, J. ; Knauer, A. ; Wenzel, H. ; Erbert, G. ; Tränkle, G. ; Bogatov, A.P. ; Drakin, A.E. ; Stratonnikov, A.A.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
Abstract :
InGaAs SQW α-DFB waveguide lasers emitting around 1060nm with a beam propagation factor of M2≤ 1.3 up to 13W output power (M2 =3.2 @ P=2.1 W) have been fabricated and characterized.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser beams; laser transitions; optical design techniques; optical fabrication; quantum well lasers; 1060 nm; 13 W; 2.1 W; InGaAs; InGaAs SQW α-DFB waveguide lasers; beam propagation factor; high-power angled-grating distributed-feedback lasers; laser design; laser fabrication; output power; Distributed feedback devices; Laser feedback; Laser theory; Optical design; Optical device fabrication; Optical propagation; Optical resonators; Power generation; Pump lasers; Semiconductor lasers;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041101
