• DocumentCode
    2365345
  • Title

    Combinatorial investigations of Co-LiF and Co-Li3N nanocomposite as new lithium storage material

  • Author

    Zhou, Yongning ; Wu, Xiaojing ; Fu, Zhengwen

  • Author_Institution
    Dept. of Mater. & Sci., Inst. Shanghai, Shanghai
  • fYear
    2008
  • fDate
    24-27 March 2008
  • Firstpage
    69
  • Lastpage
    73
  • Abstract
    Nanocomposite Co-LiF and Co-Li3N thin films were successfully fabricated by pulsed laser deposition (PLD). They were investigated as anode materials of lithium ion batteries. Both of Co-LiF and Co-Li3N thin films showed large reversible capacities. The electrochemical products were characterized by high resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) measurements. Co-LiF and Co-Li3N thin films exhibited different electrochemical reaction mechanism in discharge and charge processes. The results both provide direct evidences that reversible decomposition and formation of LiF and Li3N could be driven by nanosized transition Co metal.
  • Keywords
    cobalt; dissociation; electrochemical electrodes; electrochemistry; electron diffraction; lithium compounds; nanocomposites; pulsed laser deposition; reaction kinetics; secondary cells; transmission electron microscopy; vapour deposited coatings; Co-Li3N; Co-LiF; HRTEM; PLD; SAED; charge process; cyclic voltammogram test; discharge process; electrochemical products; electrochemical reaction mechanism; high resolution transmission electron microscopy; lithium ion battery anode material; lithium storage material; nanosized transition metal; pulsed laser deposition; reversible capacity; reversible decomposition; selected area electron diffraction; thin film morphology; thin film nanocomposite; Anodes; Batteries; Diffraction; Lithium; Optical materials; Optical pulses; Pulsed laser deposition; Sputtering; Transistors; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1572-4
  • Electronic_ISBN
    978-1-4244-1573-1
  • Type

    conf

  • DOI
    10.1109/INEC.2008.4585439
  • Filename
    4585439