Title :
GaN substrates obtained by nitridation of GaAs
Author :
Sánchez-R, Victor M. ; Escobosa, Arturo ; Avendaflo, M. ; Navarro, Gerardo
Author_Institution :
Departamento de Ingenieria Electrica, CINVESTAV-IPN, Mexico, Mexico
Abstract :
A new substrate for the growth of GaN by MOCVD is presented. Photoluminescence spectra show the bandgap emission and yellow luminescence. The latter can be reduced by optimizing the growth parameters. The optical properties of the films are comparable to those of layers obtained epitaxially on sapphire substrates.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; photoluminescence; substrates; wide band gap semiconductors; GaAs; MOCVD; bandgap emission; growth parameter optimisation; nitridation; optical properties; photoluminescence spectra; yellow luminescence; Epitaxial layers; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Luminescence; MOCVD; Optical films; Photoluminescence; Substrates; Temperature; Gallium Nitride; Nitridation;
Conference_Titel :
Electrical and Electronics Engineering, 2005 2nd International Conference on
Print_ISBN :
0-7803-9230-2
DOI :
10.1109/ICEEE.2005.1529662
