High performance 1300-nm dilute-nitride quantum well lasers by MOCVD

InGaAsN QW active lasers have shown promise as the material of choice for the active region of 1300-nm GaAs-based VCSELs. One of the challenges of growing InGaAsN QW lasers by MOCVD is due to the difficulties in incorporating N into the InGaAs QW, while maintaining a high optical quality film. The low purity of the N-precursor used in MOCVD (U-Dimethylhydrazine) is suspected as a possible reason for the low optical quality of MOCVD-grown InGaAsN QWs. In our approach, U-Dimethylhydrazine and AsH₃ are utilized in the growth of our InGaAsN QW.