DocumentCode :
2365425
Title :
Integration of power devices-next tasks
Author :
Araki, Toru
Author_Institution :
Power Device Works, Mitsubishi Electr. Corp., Fukuoka
fYear :
2005
fDate :
11-14 Sept. 2005
Abstract :
This paper presents new power chip concepts such as reverse conducting IGBT (RC-IGBT), which are integrated IGBT with diode and reverse blocking IGBT (RB-IGBT). The RC-IGBT have a big impact for conventional power modules. Because, by using RC-IGBT, we can save resources such as silicon chip (including material itself and production energy) and also save packaging materials. By using RB-IGBT, we were able to make new power control systems such as AC matrix converter and thus eliminate the large DC link capacitor. High voltage IC (HVIC) is used already as simple gate drive circuit in low power area. By using HVIC, a single gate power supply is enough for driving all 6 inverter switches. This paper presents newest HVIC concept and structure. We are developing new module packaging concepts having a new thermal dissipation structure and using transfer-molded package. This allows us to reduce package size and weight. Consequently our newest package saves resources of packaging and logistics and energy of transport. The newest power module, whose key concept is called "environmental compatibility",is a combination of RC-IGBT (or RB-IGBT), HVIC and new packaging technologies in order to save resources. The key word "environmental compatibility" is indicating our new power device\´s direction
Keywords :
insulated gate bipolar transistors; invertors; matrix convertors; packaging; power integrated circuits; power semiconductor diodes; power semiconductor switches; AC matrix converter; HVIC; environmental compatibility; gate drive circuit; gate power supply; high voltage IC; inverter switches; large DC link capacitor; packaging materials; power chip concepts; power control systems; power devices-next tasks; reverse blocking IGBT; reverse conducting IGBT; silicon chip; thermal dissipation structure; transfer-molded package; Capacitors; Conducting materials; Diodes; Insulated gate bipolar transistors; Matrix converters; Multichip modules; Packaging; Power control; Production; Silicon; EMC/EMI; Environment; FWD; High voltage IC´s; IGBT; IPM; Matrix converter; Monolithic power integration; Noise; Packaging; Power semiconductor device; Soft switching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications, 2005 European Conference on
Conference_Location :
Dresden
Print_ISBN :
90-75815-09-3
Type :
conf
DOI :
10.1109/EPE.2005.219772
Filename :
1665962
Link To Document :
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