RECEST: a reverse channel emitter switched thyristor

Author

Bhalla, Anup ; Chow, T. Paul ; So, K.C.

Author_Institution

Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

1995

fDate

23-25 May 1995

Firstpage

24

Lastpage

28

Abstract

A 550 V, reverse channel emitter switched thyristor (RECEST) is demonstrated. It offers ease of thyristor turn-on, a low on-state drop, excellent parasitic thyristor latch-up immunity and a high maximum controllable current density. It is shown to have characteristics superior to both the conventional emitter switched thyristor and the dual lateral channel emitter switched thyristor, and shows promise for use in high-voltage applications

Keywords

MOS-controlled thyristors; characteristics measurement; current density; power semiconductor switches; semiconductor device models; 550 V; RECEST; high-voltage applications; maximum controllable current density; on-state drop; parasitic thyristor latch-up immunity; reverse channel emitter switched thyristor; thyristor turn-on; Anodes; Cathodes; Connectors; Current density; Electron emission; FETs; MOSFET circuits; Semiconductor device manufacture; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515003

Filename

515003