The dual-gate BRT

Author

Kurlagunda, Ravi ; Baliga, B.J.

Author_Institution

Power Semicond. Res. Centre, North Carolina State Univ., Raleigh, NC, USA

fYear

1995

fDate

23-25 May 1995

Firstpage

29

Lastpage

33

Abstract

In this paper, a new device concept called the Dual-Gate Base Resistance controlled Thyristor (DG-BRT) is reported. The DG-BRT combines the low forward drop characteristic of MOS-gated thyristors with a good forward biased safe operating area (FBSOA). When positive bias is applied to both gates, the DG-BRT operates in the thyristor mode allowing current conduction with a low forward voltage drop. When one gate is biased positive and the other negative, the DG-BRT can saturate current to high voltages. Results of two-dimensional numerical simulations and measurements performed on devices with forward blocking of 600 V are presented here

Keywords

MOS-controlled thyristors; characteristics measurement; power semiconductor switches; semiconductor device models; 600 V; DG-BRT; MOS-gated thyristors; current conduction; device measurements; dual-gate base resistance controlled thyristor; forward biased safe operating area; forward blocking; forward drop characteristic; two-dimensional numerical simulations; Cathodes; Conductivity; Impedance; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Numerical simulation; Performance evaluation; Switches; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515004

Filename

515004