• DocumentCode
    236545
  • Title

    The establishment of high current DC shunt calibration system at KRISS and comparison with NRC

  • Author

    Kyu-Tae Kim ; Jae Kap Jung ; YoungSup Lee ; So, Eddy

  • Author_Institution
    Korea Res. Inst. of Stand. & Sci. (KRISS), Daejeon, South Korea
  • fYear
    2014
  • fDate
    24-29 Aug. 2014
  • Firstpage
    614
  • Lastpage
    615
  • Abstract
    The application of a simple binary step up method for possible calibration of high current DC shunts up to a few thousand amperes in which a pair of HCDC shunts are used to evaluate the current dependence of the shunt resistance. It was found that a complex exponential linear model can be applied to separate the drifts in voltage measurements from the contribution of the current coefficient of the shunt. This approach allows one to extract the information on the current coefficient of the shunt and together with low current measurement of the shunt resistance to calibrate the current output of HCDC source, which in turn can be used as a reference for calibration of customer´s shunts. In order to validate the step up method, the calibrated HCDC source was used to obtain DC current ratios which is to be compared with NRC´s high current ratio measurements of a multi-ratio 3000 A reference DC CT.
  • Keywords
    calibration; electric current measurement; electric resistance; voltage measurement; DC CT; DC current ratio; DC shunt calibration system; HCDC shunt; KRISS; NRC; binary step up method; complex exponential linear model; current coefficient; current measurement; drift separation; shunt resistance; voltage measurement; Calibration; Current measurement; Electrical resistance measurement; Resistance; Resistors; Voltage measurement; Voltmeters; DC CT; High current DC; calibration; comparison; current coefficient; current ratio; drift of voltage; voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on
  • Conference_Location
    Rio de Janeiro
  • ISSN
    0589-1485
  • Print_ISBN
    978-1-4799-5205-2
  • Type

    conf

  • DOI
    10.1109/CPEM.2014.6898535
  • Filename
    6898535