Title :
Fabrication and characterization of n-ZnO nanorod/p-CuAlO2 heterojunction
Author :
Ling, Bo ; Sun, Xiaowei ; Zhao, Junliang
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Nanyang
Abstract :
n-ZnO nanorod/p-CuAlO2 heterojunction diodes have been fabricated on p+-Si (100) substrates. The p-CuAlO2 thin films were deposited on Si substrates by DC-sputtering method and then n-ZnO nanorods were grown by vapor phase transport (VPT) system on the CuAlO2 layer. The well aligned ZnO nanorods show single wurtzite hexagonal structure. Current-voltage characterization of the heterojunction exhibits rectifying diode behavior with a turn-on voltage of about 4.5 V. Electroluminescence emission, involving a weak near-band-edge emission of ZnO at 380 nm and a strong deep-level emission at 550 nm were observed at room temperature from the diode under forward bias.
Keywords :
II-VI semiconductors; copper compounds; deep levels; electroluminescence; nanostructured materials; nanotechnology; semiconductor diodes; semiconductor-insulator boundaries; sputtered coatings; vapour phase epitaxial growth; zinc compounds; DC-sputtering method; Si; VPT system; ZnO-CuAlO2-Si; current-voltage characterization; electroluminescence emission; near-band-edge emission; p+-Si (100) substrates; rectifying diode; semiconductor nanorod heterojunction diodes; strong deep-level emission; turn-on voltage; vapor phase transport system; wavelength 380 nm; wavelength 550 nm; wurtzite hexagonal structure; Diodes; Electrodes; Electroluminescence; Fabrication; Heterojunctions; Sputtering; Substrates; Temperature; Voltage; Zinc oxide;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585446
