DocumentCode :
2365470
Title :
Self-isolated and high performance complementary lateral DMOSFETs with surrounding-body regions
Author :
Kitamura, Akio ; Motoi, Yasuro ; Fujishima, Naoto
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan
fYear :
1995
fDate :
23-25 May 1995
Firstpage :
42
Lastpage :
47
Abstract :
This paper reports on self-isolated complementary Lateral DMOSFETs (LDMOSFETs) with Surrounding-Body regions (SE regions). They are fully compatible with 3 V CMOS, lateral NPN and lateral PNP by using the sub-micron Bi-CDMOS process. The N-channel and P-channel DMOSFETs show breakdown voltages of 87 V and 73 V, and specific on-resistances of 0.124 Ω· mm2 and 0·315 Ω·mm 2, respectively
Keywords :
BiCMOS integrated circuits; MOSFET; electric breakdown; isolation technology; semiconductor technology; 3 V; 73 V; 87 V; breakdown voltages; complementary lateral DMOSFETs; self-isolated devices; specific on-resistances; sub-micron Bi-CDMOS process; surrounding-body regions; Breakdown voltage; CMOS process; Cities and towns; Fabrication; Implants; Impurities; Isolation technology; MOSFETs; Research and development; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
ISSN :
1063-6854
Print_ISBN :
0-7803-2618-0
Type :
conf
DOI :
10.1109/ISPSD.1995.515006
Filename :
515006
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2365470
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