Title :
Very low threshold current density of 13 μm-range GaInNAsSb/GaNAs 5QWs lasers
Author :
Setiagung, C. ; Shimizu, H. ; Kumada, K. ; Kasukawa, A.
Author_Institution :
Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
1.3 μm-range GaInNAs-based strain-compensated 5QWs lasers were successfully grown for the first time. The lasers oscillated under pulsed operation at 1.282 μm at room temperature with the very low threshold current density per well of 160 A/cm2 at 900 μm-long cavity.
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser transitions; molecular beam epitaxial growth; quantum well lasers; 1.282 micron; 13 micron; 900 micron; GaInNAsSb-GaNAs; GaInNAsSb/GaNAs MQW lasers; pulsed operation; strain-compensated MQWs lasers; very low threshold current density; Capacitive sensors; Cells (biology); Degradation; Image coding; Laser theory; Optical design; Optical materials; Plasma sources; Radio frequency; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041107
