• DocumentCode
    2365481
  • Title

    Very low threshold current density of 13 μm-range GaInNAsSb/GaNAs 5QWs lasers

  • Author

    Setiagung, C. ; Shimizu, H. ; Kumada, K. ; Kasukawa, A.

  • Author_Institution
    Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    39
  • Lastpage
    40
  • Abstract
    1.3 μm-range GaInNAs-based strain-compensated 5QWs lasers were successfully grown for the first time. The lasers oscillated under pulsed operation at 1.282 μm at room temperature with the very low threshold current density per well of 160 A/cm2 at 900 μm-long cavity.
  • Keywords
    III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser transitions; molecular beam epitaxial growth; quantum well lasers; 1.282 micron; 13 micron; 900 micron; GaInNAsSb-GaNAs; GaInNAsSb/GaNAs MQW lasers; pulsed operation; strain-compensated MQWs lasers; very low threshold current density; Capacitive sensors; Cells (biology); Degradation; Image coding; Laser theory; Optical design; Optical materials; Plasma sources; Radio frequency; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2002. IEEE 18th International
  • Print_ISBN
    0-7803-7598-X
  • Type

    conf

  • DOI
    10.1109/ISLC.2002.1041107
  • Filename
    1041107