Title :
A cost-effective smart power BiCMOS technology
Author :
Shibib, M. Ayman ; Jones, G.T.
Author_Institution :
AT&T Bell Labs., Reading, PA, USA
Abstract :
We developed a low-cost dielectrically isolated smartpower BiCMOS technology having only 10 masking levels and a unique high voltage termination scheme providing up to 95% of the parallel plane breakdown. A wide range of devices including high voltage bipolar and CMOS devices are available in this technology which is particularly suited for telecommunications switching applications but can be used for other smart power applications. The technology is being introduced to high volume manufacture
Keywords :
BiCMOS integrated circuits; integrated circuit technology; isolation technology; power integrated circuits; cost-effective technology; dielectric isolation; high voltage termination scheme; smart power BiCMOS technology; telecommunications switching applications; BiCMOS integrated circuits; Breakdown voltage; CMOS technology; Costs; Dielectrics; Integrated circuit technology; Isolation technology; JFETs; Manufacturing; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515007
