DocumentCode
2365508
Title
Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 μm lasers
Author
Tomic, Stanko ; Fehse, R. ; Choulis, S.A. ; O´Reilly, E.P. ; Adam, A.R. ; Sweeney, S.J. ; Andreev, Andrey D. ; Hosea, T.J.C. ; Riechert, H.
Author_Institution
Dept. of Phys., Surrey Univ., Guildford, UK
fYear
2002
fDate
2002
Firstpage
41
Lastpage
42
Abstract
By measuring the spontaneous emission from normally operating ∼1.3 μm GaInNAs/GaAs-based lasers we have quantitatively determined the variation of each of the current paths present in the devices as a function of temperature from 130 K to 370 K.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser theory; laser transitions; quantum well lasers; semiconductor device models; spontaneous emission; 1.3 μm GaInNAs/GaAs-based lasers; 1.3 micron; 130 to 370 K; GaInNAs-GaAs; GaInNs 1.3 μm lasers; current paths; recombination processes; spontaneous emission; Charge carrier density; Current measurement; Electrons; Laser theory; Nitrogen; Quantum well devices; Resonance; Spontaneous emission; Temperature dependence; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN
0-7803-7598-X
Type
conf
DOI
10.1109/ISLC.2002.1041108
Filename
1041108
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