Title :
SPT 170-a smart power technology combining robust high-voltage devices with precision analogue performance
Author :
Wiesinger, K. ; Kanert, W. ; Glenz, E. ; Krischke, N. ; Nelle, P. ; Peri, H. ; Pfirsch, F. ; Schwetlick, W. ; Wagner, C. ; Werner, W.M.
Author_Institution :
Semicond. Div., Siemens AG, Munich, Germany
Abstract :
We describe a smart power technology for a novel application in communication integrated circuits for public switch. This requires an extraordinary analogue performance and long term stability of a smart power process in addition to the 170 V capability of n- and p-channel devices
Keywords :
BiCMOS analogue integrated circuits; electronic switching systems; integrated circuit technology; power integrated circuits; 170 V; SPT 170; analogue performance; communication integrated circuits; high-voltage devices; n-channel devices; p-channel devices; public switch; smart power technology; stability; Bipolar transistors; Breakdown voltage; CMOS technology; Circuit simulation; Integrated circuit technology; Low voltage; Microelectronics; Power transistors; Robustness; Switching circuits;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515008
