DocumentCode
2365516
Title
SPT 170-a smart power technology combining robust high-voltage devices with precision analogue performance
Author
Wiesinger, K. ; Kanert, W. ; Glenz, E. ; Krischke, N. ; Nelle, P. ; Peri, H. ; Pfirsch, F. ; Schwetlick, W. ; Wagner, C. ; Werner, W.M.
Author_Institution
Semicond. Div., Siemens AG, Munich, Germany
fYear
1995
fDate
23-25 May 1995
Firstpage
54
Lastpage
57
Abstract
We describe a smart power technology for a novel application in communication integrated circuits for public switch. This requires an extraordinary analogue performance and long term stability of a smart power process in addition to the 170 V capability of n- and p-channel devices
Keywords
BiCMOS analogue integrated circuits; electronic switching systems; integrated circuit technology; power integrated circuits; 170 V; SPT 170; analogue performance; communication integrated circuits; high-voltage devices; n-channel devices; p-channel devices; public switch; smart power technology; stability; Bipolar transistors; Breakdown voltage; CMOS technology; Circuit simulation; Integrated circuit technology; Low voltage; Microelectronics; Power transistors; Robustness; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location
Yokohama
ISSN
1063-6854
Print_ISBN
0-7803-2618-0
Type
conf
DOI
10.1109/ISPSD.1995.515008
Filename
515008
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