DocumentCode :
2365590
Title :
1.3 μm laterally gain coupled tunable distributed feedback lasers based on GaInNAs
Author :
Müller, M. ; Gollub, D. ; Fischer, M. ; Kamp, M. ; Forchel, A.
Author_Institution :
nanoplus Nanosystems & Technol. GmbH, Gerbrunn, Germany
fYear :
2002
fDate :
2002
Firstpage :
51
Lastpage :
52
Abstract :
We have investigated tunable distributed feedback lasers based on GaInNAs/GaAs. We demonstrated continuously tunable devices with side mode suppression ratios of about 35 dB.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; infrared sources; laser modes; laser transitions; laser tuning; quantum well lasers; 1.3 μm laterally gain coupled tunable distributed feedback lasers; 1.3 micron; GaInNAs; GaInNAs-GaAs; GaInNAs/GaAs; MBE growth; side mode suppression ratios; single quantum well lasers; Distributed feedback devices; Fiber lasers; Gratings; Laser feedback; Laser modes; Laser tuning; Optical coupling; Tunable circuits and devices; Waveguide lasers; Wavelength division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
Type :
conf
DOI :
10.1109/ISLC.2002.1041113
Filename :
1041113
Link To Document :
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