Experimental investigations of 2.5 kV-100 A PT type and NPT type IGBTs

Author

Takahashi, Yoshikazu ; Yoshikawa, Koh ; Koga, Takeharu ; Soutome, Masayuki ; Seki, Yasukazu

Author_Institution

Adv. Device Technol. Lab., Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan

fYear

1995

fDate

23-25 May 1995

Firstpage

70

Lastpage

74

Abstract

The electrical characteristics of 2.5 kV-100 A μ-stack IGBTs having Punch-Through (PT) and Non-Punch-Through (NPT) types of device structures have been experimentally investigated. By optimizing the p ⁺ collector layer of the NPT type IGBT, the trade-off relationship between the saturation voltage and the turn-off energy can be obtained to fit on the curve of the PT type IGBT. The Reverse Biased Safe-Operating-Areas (RBSOAs) of the PT type and NPT type IGBTs fabricated are also very wide having a large turn-off capability of 800 A at the DC bath voltage of 1250 V

Keywords

insulated gate bipolar transistors; power transistors; μ-stack IGBTs; 100 A; 2.5 kV; RBSOA; electrical characteristics; nonpunch-through structure; p⁺ collector layer; punch-through structure; reverse biased safe-operating-areas; saturation voltage; turnoff energy; Buffer layers; Electric variables; Impedance; Inductance; Insulated gate bipolar transistors; Laboratories; Motor drives; Research and development; Semiconductor device packaging; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515011

Filename

515011