DocumentCode
2365602
Title
Use of post-growth control of the quantum-well band edge for optimized widely-tunable laser-x devices
Author
Skogen, Erik J. ; Barton, Jonathon S. ; Masanovic, Milan L. ; Getty, Jonathan T. ; DenBaars, Steven P. ; Coldren, Larry A.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear
2002
fDate
2002
Firstpage
53
Lastpage
54
Abstract
Quantum-well intermixing was used to fabricate widely-tunable multi-section MQW lasers with integrated electro-absorption device. We present the DC extinction characteristics of the intermixed material over several wavelengths.
Keywords
electro-optical modulation; electroabsorption; integrated optoelectronics; laser tuning; optimisation; photoluminescence; quantum well lasers; DC extinction characteristics; integrated electro-absorption device; intermixed material; optimized widely-tunable laser-x devices; post-growth control; quantum-well band edge; quantum-well intermixing; widely-tunable multi-section MQW lasers; Buffer layers; Distributed feedback devices; Fiber lasers; Implants; Laser feedback; Laser tuning; Monolithic integrated circuits; Optical control; Quantum well lasers; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN
0-7803-7598-X
Type
conf
DOI
10.1109/ISLC.2002.1041114
Filename
1041114
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