DocumentCode :
2365605
Title :
Surface resistance of carbon nanotube/inorganic binder/silver composite film
Author :
Tsai, I.-S. ; Huang, H.-K.
Author_Institution :
Nanotechnol. Res. Center, Feng Chia Univ., Taichung
fYear :
2008
fDate :
24-27 March 2008
Firstpage :
125
Lastpage :
129
Abstract :
This paper discussed the surface resistance of carbon nanotube (CNT)/inorganic binder/silver composites film. The used CNT were multiwalled CNT with diameter of 20 nm-40 nm and 5-15 m in length. We used two inorganic binders: sodium metasilicate and tetraethyl orthosilicate (TEOS) and two silvers: nanosilver in powder and solutions. The CNT were separated and dispersed in inorganic binder with different blend ratios. Then, ethyl cellulose as thicker was added to adjust an appropriate viscosity for screen-printing. The different thickness of composite films were fabricated on glass fabric via screen-printing process. The impact factors on the surface resistance and morphology of conductive film were discussed. The surface resistance of conductive film declined as nano Ag powder or nano Ag solution ratio increased. The more nano Ag and CNT were, the stronger probability was the electron transmission and as a result to descend the surface resistance. The surface of conductive film appeared a concave-convex outlook which didnpsilat impact on the measurement of surface resistance. CNT played the most important role for descending the surface resistance of conductive film.
Keywords :
carbon nanotubes; composite materials; nanoparticles; silver; surface resistance; thin films; viscosity; blend ratios; carbon nanotube; composites film; conductive film; electron transmission; ethyl cellulose; glass fabric; inorganic binder; morphology; screen-printing; silver; size 20 nm to 40 nm; size 5 m to 15 m; surface resistance; viscosity; Carbon nanotubes; Conductive films; Electrons; Fabrics; Glass; Powders; Silver; Surface morphology; Surface resistance; Viscosity; carbon nanotube; inorganic binder; nanosilver; sodium metasilicate; surface resistance; tetraethyl orthosilicate;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
Type :
conf
DOI :
10.1109/INEC.2008.4585452
Filename :
4585452
Link To Document :
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