DocumentCode
2365605
Title
Surface resistance of carbon nanotube/inorganic binder/silver composite film
Author
Tsai, I.-S. ; Huang, H.-K.
Author_Institution
Nanotechnol. Res. Center, Feng Chia Univ., Taichung
fYear
2008
fDate
24-27 March 2008
Firstpage
125
Lastpage
129
Abstract
This paper discussed the surface resistance of carbon nanotube (CNT)/inorganic binder/silver composites film. The used CNT were multiwalled CNT with diameter of 20 nm-40 nm and 5-15 m in length. We used two inorganic binders: sodium metasilicate and tetraethyl orthosilicate (TEOS) and two silvers: nanosilver in powder and solutions. The CNT were separated and dispersed in inorganic binder with different blend ratios. Then, ethyl cellulose as thicker was added to adjust an appropriate viscosity for screen-printing. The different thickness of composite films were fabricated on glass fabric via screen-printing process. The impact factors on the surface resistance and morphology of conductive film were discussed. The surface resistance of conductive film declined as nano Ag powder or nano Ag solution ratio increased. The more nano Ag and CNT were, the stronger probability was the electron transmission and as a result to descend the surface resistance. The surface of conductive film appeared a concave-convex outlook which didnpsilat impact on the measurement of surface resistance. CNT played the most important role for descending the surface resistance of conductive film.
Keywords
carbon nanotubes; composite materials; nanoparticles; silver; surface resistance; thin films; viscosity; blend ratios; carbon nanotube; composites film; conductive film; electron transmission; ethyl cellulose; glass fabric; inorganic binder; morphology; screen-printing; silver; size 20 nm to 40 nm; size 5 m to 15 m; surface resistance; viscosity; Carbon nanotubes; Conductive films; Electrons; Fabrics; Glass; Powders; Silver; Surface morphology; Surface resistance; Viscosity; carbon nanotube; inorganic binder; nanosilver; sodium metasilicate; surface resistance; tetraethyl orthosilicate;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location
Shanghai
Print_ISBN
978-1-4244-1572-4
Electronic_ISBN
978-1-4244-1573-1
Type
conf
DOI
10.1109/INEC.2008.4585452
Filename
4585452
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