2000 V 500 A high power IGBT module

Author

Tanaka, Akira ; Mori, Mutsuhiro ; Saito, Ryuichi ; Yamada, Kazuji

Author_Institution

Res. Lab., Hitachi Ltd., Ibaraki, Japan

fYear

1995

fDate

23-25 May 1995

Firstpage

80

Lastpage

83

Abstract

A high voltage and a large current rating, 2000 V 500 A IGBT (Insulated Gate Bipolar Transistor) module with a newly developed structure was described. The module features a small size, high reliability and low electrical noise characteristics. The high reliability is realized by using a low thermal expansion base. The modules are suitable for applications to high speed switching levels with high blocking voltages such as in traction motor drives

Keywords

circuit reliability; insulated gate bipolar transistors; invertors; modules; power semiconductor switches; power transistors; semiconductor device packaging; semiconductor device reliability; 2000 V; 500 A; HV module; high power IGBT module; high reliability; insulated gate bipolar transistor; invertor application; low electrical noise characteristics; low thermal expansion base; Ceramics; Diodes; Electric variables; Epoxy resins; Fluctuations; Humidity; Insulated gate bipolar transistors; Inverters; Traction motors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515013

Filename

515013