Title :
2000 V 500 A high power IGBT module
Author :
Tanaka, Akira ; Mori, Mutsuhiro ; Saito, Ryuichi ; Yamada, Kazuji
Author_Institution :
Res. Lab., Hitachi Ltd., Ibaraki, Japan
Abstract :
A high voltage and a large current rating, 2000 V 500 A IGBT (Insulated Gate Bipolar Transistor) module with a newly developed structure was described. The module features a small size, high reliability and low electrical noise characteristics. The high reliability is realized by using a low thermal expansion base. The modules are suitable for applications to high speed switching levels with high blocking voltages such as in traction motor drives
Keywords :
circuit reliability; insulated gate bipolar transistors; invertors; modules; power semiconductor switches; power transistors; semiconductor device packaging; semiconductor device reliability; 2000 V; 500 A; HV module; high power IGBT module; high reliability; insulated gate bipolar transistor; invertor application; low electrical noise characteristics; low thermal expansion base; Ceramics; Diodes; Electric variables; Epoxy resins; Fluctuations; Humidity; Insulated gate bipolar transistors; Inverters; Traction motors; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515013
