• DocumentCode
    2365653
  • Title

    A new high power low loss GTO

  • Author

    Nakagawa, T. ; Tokunoh, F. ; Yamamoto, M. ; Koga, S.

  • Author_Institution
    Mitsubishi Electr. Corp., Fukuoka, Japan
  • fYear
    1995
  • fDate
    23-25 May 1995
  • Firstpage
    84
  • Lastpage
    88
  • Abstract
    A new high power, low loss, and low snubber gate turn-off thyristor (GTO) which has a current capacity of 6 kA with a snubber capacitance of 6 μF and blocking voltage of 6 kV has been developed. GTO has an advantage over conventional thyristors in its application to inverters. Recently GTO´s have been applied to high power inverters for traction and industries, and static V.A.R. Generators (SVG). The ratings of these GTO´s are such as 4.5 kV and 4 kA, or 6 kV and 3 to 4 kA by using a 4 inch silicon wafer. However, higher voltage, higher current GTO´s are required for the application of motor control for iron mills, and SVG´s for power supplies. On the other hand, reduction of power losses of GTO, and snubber capacitance were required for decreasing weight and volume and improving performance of equipment. For those reasons, a new high power, low loss, and low snubber GTO, FG6000AU-120D was developed. In order to develop this new GTO, we used some new technologies, and studied some parameters of device designs using some test samples. The development of this new GTO was based on the results of these studies and use of these new technologies. Design consideration of this GTO and electrical characteristics are described in this paper
  • Keywords
    capacitance; losses; power semiconductor switches; thyristors; 6 kA; 6 kV; 6 muF; FG6000AU-120D; Si; blocking voltage; electrical characteristics; gate turn-off thyristor; high power GTO; high power inverters; low loss GTO; low snubber GTO; power losses; snubber capacitance; Capacitance; Inverters; Iron; Milling machines; Motor drives; Power supplies; Silicon; Snubbers; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
  • Conference_Location
    Yokohama
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-2618-0
  • Type

    conf

  • DOI
    10.1109/ISPSD.1995.515014
  • Filename
    515014