Title :
A planar, nearly ideal, SiC device edge termination
Author :
Alok, Dev ; Baliga, B.J.
Author_Institution :
Power Semicond. Res. Centre, North Carolina State Univ., Raleigh, NC, USA
Abstract :
In this paper, a simple edge termination is described which can be used to achieve nearly ideal parallel plane breakdown voltage in silicon carbide devices. This novel termination, involves implantation of a neutral species on the edges of devices to form a high resistivity amorphous layer. With this termination, formed using argon implantation, the breakdown voltage of Schottky barrier diodes was measured to be very close to the ideal parallel plane breakdown voltage
Keywords :
Schottky diodes; argon; electric breakdown; ion implantation; power semiconductor devices; power semiconductor diodes; silicon compounds; wide band gap semiconductors; Ar implantation; Schottky barrier diodes; SiC:Ar; high resistivity amorphous layer; neutral species implantation; parallel plane breakdown voltage; planar device edge termination; Amorphous semiconductors; Argon; Conductivity; Dielectric materials; Implants; Magnetic resonance; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515016
