A planar, nearly ideal, SiC device edge termination

Author

Alok, Dev ; Baliga, B.J.

Author_Institution

Power Semicond. Res. Centre, North Carolina State Univ., Raleigh, NC, USA

fYear

1995

fDate

23-25 May 1995

Firstpage

96

Lastpage

100

Abstract

In this paper, a simple edge termination is described which can be used to achieve nearly ideal parallel plane breakdown voltage in silicon carbide devices. This novel termination, involves implantation of a neutral species on the edges of devices to form a high resistivity amorphous layer. With this termination, formed using argon implantation, the breakdown voltage of Schottky barrier diodes was measured to be very close to the ideal parallel plane breakdown voltage

Keywords

Schottky diodes; argon; electric breakdown; ion implantation; power semiconductor devices; power semiconductor diodes; silicon compounds; wide band gap semiconductors; Ar implantation; Schottky barrier diodes; SiC:Ar; high resistivity amorphous layer; neutral species implantation; parallel plane breakdown voltage; planar device edge termination; Amorphous semiconductors; Argon; Conductivity; Dielectric materials; Implants; Magnetic resonance; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515016

Filename

515016