Title :
Reliable uncooled 10-Gbit/s operation of GaInNAs-SQW laser
Author :
Aoki, M. ; Kondow, M. ; Kitatani, T. ; Nakatsuka, S. ; Kudo, M. ; Tsuji, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
A 1.27-μm GaInNAs-SQW edge-emitting laser diode (LD) demonstrated 80°C 10-Gbit/s direct-modulation. Stable aging at 85°C shows the potential of this material LDs for cost-effective long-wavelength light sources.
Keywords :
III-V semiconductors; ageing; electro-optical modulation; gallium arsenide; indium compounds; laser reliability; optical testing; optical transmitters; quantum well lasers; semiconductor device reliability; semiconductor device testing; 10 Gbit/s; 80 degC; 85 degC; GaInNAs; GaInNAs SQW edge-emitting LD; GaInNAs SQW edge-emitting laser diode; GaInNAs SQW laser; Gbit/s direct-modulation; long-wavelength light sources; reliable uncooled 10-Gbit/s operation; stable aging; Aging; Current measurement; Gain measurement; Gallium arsenide; Laboratories; Metropolitan area networks; Rapid thermal annealing; Semiconductor device measurement; Temperature dependence; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041119
