DocumentCode
2365731
Title
The flow characteristics of borophosphosilicate (TEOS based) glass
Author
Chittipeddi, S. ; Velaga, A.N. ; Nanda, A.K. ; Cochran, W.T. ; Graver, R.N.
Author_Institution
AT&T Bell Lab., Allentown, PA, USA
fYear
1991
fDate
11-12 Jun 1991
Firstpage
68
Lastpage
74
Abstract
The authors examine the role of boron and phosphorus concentrations in the flow characteristics of borophosphosilicate (TEOS based) glass. The glass was deposited using TEOS (tetraethylorthosilicate), phosphine and TMB (trimethylborate), as precursors. Previous studies on the flow characteristics have relied on scanning electron microscopy (SEM) work to study the flow. In this work, however, the authors present a quantitative study of flow as measured using electrical flow testers which measured the metal resistance ratios over topography to those over flat for polysilicon spacings from 0.4 μ to 4.0 μ. They have studied the effect of boron and phosphorus concentrations in the regime of 3.5%-4.4% as measured using FTIR. It is found that the boron concentration is more dominant in determining the flow characteristics than the phosphorus concentrations. Further, it has also been found that the duration of the flow especially at the lower concentrations of boron (<4.0%) is important in determining the glass flow. SEM work is also presented in this study to augment the electrical data
Keywords
borosilicate glasses; chemical vapour deposition; phosphosilicate glasses; scanning electron microscope examination of materials; B concentration; B2O3-P2O5-SiO2; BPSG; LPCVD; P concentration; SEM; TEOS based glass; TMB; electrical flow testers; flow characteristics; glass flow; metal resistance ratios; phosphine; polysilicon spacings; scanning electron microscopy; tetraethylorthosilicate; trimethylborate; Boron; Control systems; Electrical resistance measurement; Glass; Inductors; Plasma temperature; Pressure control; Scanning electron microscopy; Semiconductor films; Temperature control;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location
Santa Clara, CA
Print_ISBN
0-87942-673-X
Type
conf
DOI
10.1109/VMIC.1991.152968
Filename
152968
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