• DocumentCode
    2365731
  • Title

    The flow characteristics of borophosphosilicate (TEOS based) glass

  • Author

    Chittipeddi, S. ; Velaga, A.N. ; Nanda, A.K. ; Cochran, W.T. ; Graver, R.N.

  • Author_Institution
    AT&T Bell Lab., Allentown, PA, USA
  • fYear
    1991
  • fDate
    11-12 Jun 1991
  • Firstpage
    68
  • Lastpage
    74
  • Abstract
    The authors examine the role of boron and phosphorus concentrations in the flow characteristics of borophosphosilicate (TEOS based) glass. The glass was deposited using TEOS (tetraethylorthosilicate), phosphine and TMB (trimethylborate), as precursors. Previous studies on the flow characteristics have relied on scanning electron microscopy (SEM) work to study the flow. In this work, however, the authors present a quantitative study of flow as measured using electrical flow testers which measured the metal resistance ratios over topography to those over flat for polysilicon spacings from 0.4 μ to 4.0 μ. They have studied the effect of boron and phosphorus concentrations in the regime of 3.5%-4.4% as measured using FTIR. It is found that the boron concentration is more dominant in determining the flow characteristics than the phosphorus concentrations. Further, it has also been found that the duration of the flow especially at the lower concentrations of boron (<4.0%) is important in determining the glass flow. SEM work is also presented in this study to augment the electrical data
  • Keywords
    borosilicate glasses; chemical vapour deposition; phosphosilicate glasses; scanning electron microscope examination of materials; B concentration; B2O3-P2O5-SiO2; BPSG; LPCVD; P concentration; SEM; TEOS based glass; TMB; electrical flow testers; flow characteristics; glass flow; metal resistance ratios; phosphine; polysilicon spacings; scanning electron microscopy; tetraethylorthosilicate; trimethylborate; Boron; Control systems; Electrical resistance measurement; Glass; Inductors; Plasma temperature; Pressure control; Scanning electron microscopy; Semiconductor films; Temperature control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    0-87942-673-X
  • Type

    conf

  • DOI
    10.1109/VMIC.1991.152968
  • Filename
    152968