DocumentCode :
2365731
Title :
The flow characteristics of borophosphosilicate (TEOS based) glass
Author :
Chittipeddi, S. ; Velaga, A.N. ; Nanda, A.K. ; Cochran, W.T. ; Graver, R.N.
Author_Institution :
AT&T Bell Lab., Allentown, PA, USA
fYear :
1991
fDate :
11-12 Jun 1991
Firstpage :
68
Lastpage :
74
Abstract :
The authors examine the role of boron and phosphorus concentrations in the flow characteristics of borophosphosilicate (TEOS based) glass. The glass was deposited using TEOS (tetraethylorthosilicate), phosphine and TMB (trimethylborate), as precursors. Previous studies on the flow characteristics have relied on scanning electron microscopy (SEM) work to study the flow. In this work, however, the authors present a quantitative study of flow as measured using electrical flow testers which measured the metal resistance ratios over topography to those over flat for polysilicon spacings from 0.4 μ to 4.0 μ. They have studied the effect of boron and phosphorus concentrations in the regime of 3.5%-4.4% as measured using FTIR. It is found that the boron concentration is more dominant in determining the flow characteristics than the phosphorus concentrations. Further, it has also been found that the duration of the flow especially at the lower concentrations of boron (<4.0%) is important in determining the glass flow. SEM work is also presented in this study to augment the electrical data
Keywords :
borosilicate glasses; chemical vapour deposition; phosphosilicate glasses; scanning electron microscope examination of materials; B concentration; B2O3-P2O5-SiO2; BPSG; LPCVD; P concentration; SEM; TEOS based glass; TMB; electrical flow testers; flow characteristics; glass flow; metal resistance ratios; phosphine; polysilicon spacings; scanning electron microscopy; tetraethylorthosilicate; trimethylborate; Boron; Control systems; Electrical resistance measurement; Glass; Inductors; Plasma temperature; Pressure control; Scanning electron microscopy; Semiconductor films; Temperature control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
Type :
conf
DOI :
10.1109/VMIC.1991.152968
Filename :
152968
Link To Document :
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